Imaging of the Electric Fields and Charge Associated with Modulation‐Doped 4H/3C/4H Polytypic Quantum Wells in SiC

Polytypic 3C quantum wells (double Shockley stacking faults) are spontaneously generated during thermal processing of moderately doped 4H‐SiC epilayers grown on substrates with heavy n‐type doping above ∼3×1019 cm−3. They intersect the wafer surface as straight lines, due to the 8° misorientation of the wafer from the c‐axis. We describe observations of electric fields and charge associated with these intersections using electrostatic force microscopy (EFM) and scanning Kelvin probe microscopy (SKPM). The results are compared to two‐dimensional electrostatic simulations.