capacitive structure of integrated circuit

capacitive structure made in levels of an integrated circuit, comprising: side stacks (2, 3) of overlapping sub frames (4, 5), each secondary frame includes transverse arms (8, 11) connected by a longitudinal branch (10, 13); means (14, 15) for connecting the superimposed sub frames of each of said stacks; first and second means (16, 17) for successively and alternately connected so as to constitute a first sub-group (18) of side stacks (2) and a second subgroup (19) of side stacks (3); at least two main stacks (20, 21) superposed main plates (22, 23) respectively comprising transverse branches (24, 27) connected by a longitudinal arm (25, 28) arranged so that the transverse limbs of the main reinforcements and the transverse limbs of sub frames of said rows extend opposite each other and between each other alternately; means (26, 29) for connecting the main frames of each of said main superposed stacks (20, 21); and means (33a) for connecting said main stacks (20, 21) so as to constitute a group of main reinforcement stacks.