Cell channel ion-implant method of semiconductor device

The present invention reduces the leakage current of the storage electrode contact region by is injected twice impurities edge portion of the bit line contact region and the bit line contact region and the adjacent channel region of the cell region, and is injected only once, the other parts of the cell area to improve the refresh characteristic of the device relates to a cell channel ion implantation method of the semiconductor device. In the present invention the cell channel ion of the semiconductor device of the cell channel ion implantation method of the semiconductor device includes a semiconductor substrate having a cell region implantation method according to, but do the cell channel ion implantation before the gate forming process, the cell area of ​​the bit line contact region and the bit line contact region and the adjacent channel region of the edge portion, the cell channel ion implantation processes twice performed, and the other region is carried out once by the bit line contact region and the channel region of the cell region, It characterized in that to the edge of the impurity concentration higher than the other areas.