Ultra low miller capacitance trench-gate IGBT with the split gate structure

This paper presents a newly developed trench gate IGBT which utilizes the split gate structure. It can realize both low Miller capacitance and high Injection Enhancement (IE) effect. The Miller capacitance has been reduced to 1/10 compared to that of the general trench gate structure with floating p-base. As a result, the turn-on power dissipation has been reduced by about 10% under the same turn-on di/dt and high recovery dV/dt controllability has also been achieved because of its lower gate-collector coupling. The trade-off relationship between the on-state voltage drop and the turn-off power dissipation has been improved by about 15% compared to the conventional IGBT.