Top-illuminated InGaAs/InP p-i-n photodiodes with a 3-dB bandwidth in excess of 26 GHz

Top-illuminated InGaAs p-i-n photodiodes have been fabricated from metal organic vapor-phase epitaxy (MOVPE) material, grown on semi-insulating InP substrates. A flat frequency response to 26 GHz has been measured, which is the highest figure yet reported for such devices. The predicted 3-dB bandwidth of these devices is 35 GHz. >