A method of processing a semiconductor device

The method (100) for processing a semiconductor device, comprising: forming a final metal layer (403); forming an ALD passivation layer (404) over the final metal layer (403); and the common patterning the ALD passivation layer (404) and the final metal layer (403) to form a patterned metal layer (403) and a structured ALD passivation layer (404), wherein the patterned metal layer (403) comprises a pad portion (406) of the of the structured ALD passivation layer (404) is covered, wherein the ALD passivation layer (404) is formed by an atomic layer deposition method over the final metal layer (403).