Using a Temperature-Switching Approach to Evaluate Low-Dose-Rate Ionizing Radiation Effects on SET in Linear Bipolar Circuits

In this paper, a temperature-switching approach (TSA) was used to evaluate low-dose-rate (LDR) ionizing radiation effects on single-event transients (SETs) in linear bipolar circuits. The experimental results show that the SET phenomenon of bipolar circuits after irradiation using a TSA with 3-rad(Si)/s dose rate is basically consistent with the SET phenomenon of bipolar circuits after LDR of 0.01-rad(Si)/s irradiation, which is obviously different from the SET phenomenon of bipolar circuits after the high-dose-rate of 10-rad(Si)/s irradiation. The TSA for evaluating the enhanced LDR sensitivity (ELDRS) of bipolar devices can be applied to the rapid evaluation of the SET effect of the bipolar circuits with LDR irradiation.