Ultraviolet detector and a method for preparing a wide band gap of the oxide semiconductor thin film layer having a passivated

Ultraviolet detector and a method for preparing a wide band gap of the oxide semiconductor thin film layer has a passivation treatment, belonging to the technical field of semiconductor optoelectronic devices. Detector successively by the substrate, light is (NH4) 2S solution passivation wide bandgap sensitive oxide semiconductor thin film layer, the metal composition of the interdigital electrode. Characterized in that: Firstly, a thin film layer and the like TiO2 sol - gel Method, the prepared film was then ammonium sulfide solution, passivation, and finally by photolithography, sputtering and etching processes for preparing metal interdigital electrode, thereby obtaining an ultraviolet detector. After TiO2 film surface state density and other ammonium sulfide solution passivation treatment reduced, sputtered metal interdigitated Schottky barrier contact with the TiO2 electrode metal after reduction, and improving the response time of the photocurrent; surface charge on the other hand reduces the surface leakage current is suppressed to improve the dark current, and ultimately improve the overall performance of the device.