SiC power Schottky diodes: industrial development

The paper describes the results obtained in a trial of the industrial fabrication of silicon carbide power Schottky diodes. The structure technology uses the simple ramp oxide edge termination to minimize field crowding at the edge of the metal contact and high temperature metal annealing to reduce the specific metal-semiconductor resistance. By optimising the Schottky barrier the best diode results obtained for a 10/sup 16/ cm/sup -3/, 3 /spl mu/m thickness 4H n-SiC epilayer are: 3.7 V forward voltage drop at 1000 A/cm/sup 2/, and a 35 /spl mu/A/cm/sup 2/ at an 100 V reverse voltage while the maximum breakdown voltage was around of 300 V.