Raman spectra of silicon carbide small particles and nanowires

Two manufacturing protocols of silicon carbide (SiC) nanowires are discussed. The Raman spectra of produced SiC nanowires are compared with spectra of SiC powders of various grain sizes. The temperature and pressure dependence of the Raman spectra for powders is similar to that of bulk crystals, but is different for nanowires. Frequency shifts, band broadenings and the presence of shoulders are discussed in terms of crystal size, character of defects and their population. The concentration of defects in synthesized nanowires depends on the sintering method. Raman intensity enhancement of the LO phonon was observed when the wavelength of the excitation laser was changed from 780 to 514 nm.