Structure and dielectric properties of BaTiO3–BiScO3 ceramics sintered by CaF2–4LiF aids

AbstractThe effect of CaF2–4LiF (1–5 mol.-%) on the phase structure, microstructure and dielectric properties of 0·9BaTiO3–0·1BiScO3 (0·9BT–0·1BS) ceramics has been investigated. The 0·9BT– 0·1BS with CaF2–4LiF dopant ceramics sintered at 1100°C show a pure perovskite structure. Results show that CaF2–4LiF dopant can improve the sintering ability of 0·9BT–0·1BS ceramics when CaF2–4LiF content is below 3 mol.-%. The ceramics with 3 mol.-%(CaF2–4LiF) sintered at 1100°C exhibit a high permittivity, low dielectric loss as well as flat ϵ′ v. temperature curve indicating a favourable temperature stability, which are listed as follows: ϵ′25 °C=1483, tan δ 25 °C=0·00309, Δϵ′/ϵ′25 °C ≤ ± 13% at 100 kHz, in the temperature range from –55 to 150°C. This low sintering temperature allows using relatively inexpensive internal electrodes in the production of future capacitors.