Epitaxial structure and growing method for improving gallium nitride (GaN) based light-emitting diode (LED) lighting efficiency

The invention discloses an epitaxial structure and a growing method for improving gallium nitride (GaN) based light-emitting diode (LED) lighting efficiency. The order of the epitaxial structure from bottom to up is that a substrate, a low-temperature GaN buffer layer, a GaN non-doping layer, a N-shaped GaN layer, a multiple quantum well (MQW) structure, a multiple quantum well active layer, a low-temperature P-shaped GaN layer, a P-shaped aluminum (AL) GaN layer, a high-temperature P-shaped GaN layer and a P-shaped contact layer, wherein the order of the multiple quantum well active layer from bottom to up comprises a InyGa1-yN potential well layer, a InN layer and a barrier layer in sequence. The growing method of the multiple quantum well active layer structure is that by inserting the InN layer and a low-temperature annealing step in the growing process of a InyGa1 potential well layer and a GaN barrier layer, so that the composition of In quantum dot in the barrier layer is advanced and crystalline quality of the quantum well is improved, therefore, gallium nitride based LED lighting efficiency is improved.