Method for fabricating polycrystalline silicon and apparatus for the same

PURPOSE: A method for fabricating a polycrystalline silicon and an apparatus for the same are provided to prevent lamination of silicon on a surface of a reaction gas supply portion by implanting an etching gas to the surface of the reaction gas supply portion. CONSTITUTION: A floating layer reactor(1) floats silicon particles by filling silicon particles into an upper portion of a gas distributor(2) and supplying a reaction gas and a floating gas to a reaction gas nozzle(3) and the gas distributor(2). A reaction gas supply portion the floating layer reactor(1) is formed with the gas distributor(2) for supplying the floating gas and the reaction gas nozzle(3) connected with the gas distributor(2). An etching gas nozzle(4) is used for supplying an etching gas to the floating layer reactor(1). The etching gas includes hydrogen chloride and inert gases. The gas distributor(2) and the reaction gas nozzle(3) are connected with an exhaust portion(7).