Model simulations of continuous ion injection into electron-beam ion source trap with slanted electrostatic mirrora)

The efficiency of trapping ions in an electron-beam ion source (EBIS) is of primary importance for many applications requiring operations with externally produced ions: RIA breeders, ion sources, and traps. At the present time, the most popular method of ion injection is pulsed injection, when short bunches of ions get trapped in a longitudinal trap while traversing the trap region. Continuous trapping is a challenge for EBIS devices because mechanisms which reduce the longitudinal ion energy per charge in a trap (cooling with residual gas, energy exchange with other ions, and ionization) are not very effective, and accumulation of ions is slow. A possible approach to increase trapping efficiency is to slant the mirror at the end of the trap which is opposite to the injection end. A slanted mirror will convert longitudinal motion of ions into transverse motion, and, by reducing their longitudinal velocity, prevent these ions from escaping the trap on their way out. The trade-off for the increased trapping...