Laser Synthesis of Nanometric Iron Oxide Films with High Seebeck Coefficient and High Thermoelectric Figure of Merit

Radiation of a KrF-laser (λ=248 nm) was used for the synthesis by reactive pulsed laser deposition (RPLD) of nanometric iron oxide (Fe2O3-X (0≤×≤1)) films with variable thickness, stoichiometry and electrical properties. Film deposition was carried out on Si at its temperature to have being increased from 293 to 800 K. XRD analysis showed that films deposited on Si substrate had polycrystalline structure. Films demonstrated semiconductor temperature trend with variable band gap Eg about 1.0 eV or less depending on oxygen pressure, the number of laser pulses and substrate temperature. Film thickness (13-60 nm) depended on oxygen pressure, substrate temperature and number of laser pulses. The higher substrate temperature, the more crystallinity of the deposited iron oxides' films was resulting in increasing of thermo electromotive force coefficient (Seebeck coefficient, S). It was found out the optimum oxygen pressure in the reactor, substrate temperature and film thickness when the S coefficient was high as 12-4 mV/K in the range 240-330 K. The thermoelectric figure of merit (ZT) was high as 1-6 in the range 280-330 K. This makes nanometric Fe2O3-X films, synthesized by UV photons using RPLD method, an exceptionally strong candidate for effective thermo sensors and thermo converters operating at moderate temperature.