photovoltaic element comprising a semiconductor layer non-single crystal material containing at least Zn, yh is in an amount of 1 to 4 atomic%.

ELEMENT PHOTOVOLTAIC GENERATING FORCE photoelectromotive by connecting LAYER SEMICONDUCTOR TYPE-P AND OTHER TYPE-N, wherein at least one of said layers is made of a deposited film composed of Zn atoms, SE, optionally TE, AND AT LEAST H, cONTAINING SUCH A dopant film deposited p-type or n-type, containing 1-4 atom% H atoms, atom-containing SE and TE in the ratio 1: 09.03 7 (in terms of number of atoms), and also has BEANS IN A RELATIONSHIP OF 65-85% volume per volume.