Ion implantation for high-speed III–V ICs

Abstract This paper describes the current technical state of ion implantation in III–V compounds for application to high speed ICs. Primary focus is on GaAs. Implantation into AlGaAs/GaAs heterostructures is also discussed. Effects of substrate quality, stress from capping materials and lateral diffusion of dopants on controlled doping required for IC fabrication are discussed. It is indicated that AIN is effective for minimizing the stress effect on doping. Rapid thermal annealing is suggested to be a promising technique for reducing lateral diffusion which induces a short channel effect. This technique will also be important for doping in heterostructures while minimizing the change in the interface properties.