Ultra Thin High Quality Ta 2 O 5 Gate Dielectrics Prepared by In-situ Rapid Thermal Processing

In this paper, ultra thin CVD Ta2O5 stacked gate dielectrics (Teq∼14A-22A) was fabricated by in-situ RTP processing. The leakage current of Ta2O5 devices is 103× lower leakage current compared to SiO2 of identical thickness for devices with Teq between 18A-22A. While Teq<18A, the leakage current follows same train and J∼10−3A/cm2 for Ta2O5 stacked gate dielectrics with Teq=14A. Superior interface properties and reliability have been obtained.