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High-power laser diodes (lambda = 808 850 nm) based on asymmetric separate-confinement heterostructures
High-power laser diodes (lambda = 808 850 nm) based on asymmetric separate-confinement heterostructures
2006
Andrei Yu. Andreev
A. Yu. Leshko
A. V. Lyutetskii
Aleksandr A. Marmalyuk
T. A. Nalyot
A. A. Padalitsa
N. A. Pikhtin
D. R. Sabitov
V. A. Simakov
S. O. Slipchenko
M. A. Khomylev
I. S. Tarasov
Keywords:
Vertical-cavity surface-emitting laser
Ultrafast laser spectroscopy
Chemistry
Laser diode
Laser power scaling
Laser
Far-infrared laser
Optics
Distributed feedback laser
Quantum heterostructure
Correction
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