Fabrication and electrical characterization of Li–N dual doped ZnO thin film transistor

Abstract The fabrication and electrical characterization of Li–N dual doped ZnO (ZnO:(Li,N)) thin film transistor (TFT) were studied in this work. The ZnO:(Li,N) film was deposited on SiO 2 /p-type Si substrates by radio frequency magnetron sputtering (RFMS) at room temperature. X-ray diffraction patterns revealed that the film was polycrystalline structure with preferential orientation in c -axis direction. The transmittance of the film was over 90% in the visible region after annealing. The electrical characterization showed a field effect mobility of 30.8 cm 2 /V s and an on/off current ratio of 2.16 × 10 7 for ZnO:(Li,N) TFT with a long-channel L  = 120 μm.