High-Quality GaN Film Grown by HVPE with an Anodized Aluminum Oxide Mask

High-quality GaN films were deposited by hydride vapor phase epitaxy (HVPE) on metalorganic chemical vapor deposition GaN templates using an anodized aluminum oxide mask. High-resolution X-ray diffraction, scanning electron microscopy, and cathod-oluminescence were used to highlight the excellent crystalline quality of the films, and the optical properties at different positions of the as-grown layers. The optical properties of the GaN films improved with increased film thickness. The PL peak position indicates stress relaxation by the AAO mask.