Electrical Properties of Polycrystalline Silicon MOSFETs on Glass

The growth and electrical properties of polycrystalline silicon films on glass have been studied. Polycrystalline silicon films can be formed by conventional e-gun evaporation at a temperature below 550°C in high vacuum (1×10-6 Torr). Both N-channel and P-channel MOSFETs have been fabricated using e-gun evaporated polycrystalline silicon films. These MOSFETs are operating in the enhancement mode and they have field effect mobilities more than 10 cm2/Vsec. Simple integrated circuits for a 21-stage ring oscillator have been operating in N-channel devices and in P-channel devices. Propagation delay time and power dissipation are 181 nsec and 1.1 mW, respectively, at 30 V supply voltage in the N-channel devices.