Organic thin film transistor and method of forming the same

The organic thin film transistor and a method are provided. The method of forming the organic thin film transistor is formed in the source electrode and the drain electrode in the to form a gate electrode, covers the gate electrode on a substrate to form a gate insulating film having a recess youngyeokreul thereon, the recessed region on the substrate will, and it comprises forming an organic semiconductor layer in the recess region between the source electrode and the drain electrode, and forming the source electrode, the drain electrode, the organic semiconductor layer and the gate electrode is the source electrode above the one side is one side being aligned with one side of the gate electrode, the drain electrode contacting the organic semiconductor layer in contact with the organic semiconductor layer include those arranged on the other side of the gate electrode.