Old Web
English
Sign In
Acemap
>
Paper
>
In-situ Doped Embedded-SiGe Source/Drain Technique for 32 nm-node pMOSFET
In-situ Doped Embedded-SiGe Source/Drain Technique for 32 nm-node pMOSFET
2007
H. Okamoto
Akira Hokazono
K. Adachi
Nobuaki Yasutake
Hiroshi Itokawa
Shintaro Okamoto
Masaki Kondo
Hideji Tsujii
T. Ishida
N. Aoki
M. Fujiwara
Shigeru Kawanaka
A. Azuma
Y. Toyoshima
Keywords:
Doping
Analytical chemistry
Materials science
Optoelectronics
In situ
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
1
Citations
NaN
KQI
[]