Fabrication and characterization for single crystal substrates of YBa2Cu3O7 δ and related materials

Abstract We have characterized oxide superconductor single crystal substrates for thin film processing, called ‘homoepitaxial growth’, which were fabricated from single crystals of YBa 2 Cu 3 O 7 δ and 123-structure related materials such as YBa 2 (Cu 1 x Zn x ) 3 O 7 δ and Pr 1 + x Ba 2 x Cu 3 O 7 δ grown by the pulling method. Those substrates have good crystallinity with a Z min value of approximately 2%, evaluated by Rutherford backscattering spectrometry and good surface morphology with unit-cell steps observed by atomic force microscopy. Therefore, those substrates are necessary for completing fine processing, 123-structure pseudo-homoepitaxial growth, for device applications.