RTS and 1/f Noise in Submicron MOSFETs

The capture and emission time constants dependence on drain current for constant gate voltage and variable drain voltage show that probability for charge carrier capture decreases with increasing lateral electric field while emission process is independent on lateral field intensity. We have performed analyses of SiO2 gate insulating layer from VA characteristics measured in wide temperature range (gate electrode area 1.5 μm2, insulating layer thickness 6 nm. Leakage current in reverse mode of n‐MOS sample (for gate electrode negative) is for applied voltage lower than 1 V exponential function of applied voltage with saturation current I0 = (1–3)×10−16 A and ideality factor near to 1. Saturation current value corresponds to Schottky barrier high about 1.2 eV. We suppose that in SiO2 gate insulating layer and on the interface Si‐SiO2 there are oxygen vacancies and interstitials. High density of overlapping energy localized states creates in SiO2 impurity conduction band about 1.2 eV above the Si conduction...