Phase-Locked Arrays Of InGaAsP/InP Diode Lasers Grown By Low-Pressure Metalorganic Chemical Vapor Deposition

Results on phase-locked arrays of InGaAsP/InP index-guided diode lasers grown entirely by low pressure metalorganic chemical vapour deposition are presented. Two different array structures are compared : 1) the evanescently coupled array of inverted channeled substrate planar lasers and 2) the Y-junction coupled array of buried ridge lasers in order to assess their potential as sources of high powers in stable and narrow beam. Single-lobe beam operation is achieved by evanescent coupling, while the device is shown to be sensitive to fabrication and operation conditions and not practical as high power source. Uncoated Y-coupled arrays exhibit output power up to 158 mW CW/facet when bonded on diamond heatsink. Such devices are expected to give enhanced performance by further improvement in design and fabrication and should prove useful for free space optical communications.