НАБЛЮДЕНИЕ ОСОБЕННОСТЕЙ ФАЗОВЫХ ПЕРЕХОДОВ В КРЕМНИИ ПРИ ВЫСОКОМ ЛОКАЛЬНОМ ДАВЛЕНИИ В УСЛОВИЯХ ИНДЕНТИРОВАНИЯ

Instrumented indentation is a very promising technique for studying structural phase transitions in crystalline materials such as silicon.In the present work silicon samples with different crystallographic orientations and doping rates were investigated using indentation with a pyramid indentor of Berkovich type. For studying the electrical properties the indentor was made of semiconductor boron−doped single crystalline diamond. For verification of structural transitions in silicon Raman spectroscopy technique was applied.Electrical current through the contact area under the indentor was measured simultaneously with recording the mechanical response of the material during the indentation process. It is shown that variation in current value gives additional information about the conditions of contact between the indentor and the sample surface. The influence of variations in resistivity and contact area on the measured electrical current value is discussed.