Resonance-enhanced tunneling current through Si-p/n junction with additional dopants; theoretical study

The tunneling probability of electrons through a Si-p/n junction with additional dopants is calculated by the time evolution of wave packets using the simple one-dimensional tight-binding model. It was shown that the probability is markedly enhanced, being consistent with experiments. We showed that such enhancement is caused by the resonance between the isolated dopant electronic state and continuous conduction- or valence-band states of host Si in the junction. Moreover, we demonstrate that the probability strongly depends on the spatial and energy positions of the dopant electronic state.