Multi-stacking Indium Zinc Oxide Thin-Film Transistors Post-annealed by Femtosecond Laser

Indium zinc oxide thin-film transistors with a bottom gate structure were made by a channel layer multi-stack process on silicon substrate. Femtosecond laser post-annealing treatment was carried out to study the impact on the electrical properties and the stability of the device. The experimental results show that the electrical properties of the device are improved optimally when 100-s laser post-annealing treatment was carried out, and it had the best stability. The mobility was 5.23 cm2/Vs, the threshold voltage was − 0.26 V, the stable subthreshold swing was 0.81 V/dec, and the electron mobility of the device stayed above 3.82 cm2/Vs after it was exposed to air for 14 days. Figure a shows the transfer characteristic curve of the IZO TFTs obtained by measuring the drain current (Ids) a function of gate voltage (Vgs) swept from − 0 to 30 V, at a fixed drain voltage (Vds) of 30 V. Figure b shows the devices put in an atmospheric environment for 14 days and then detected their electrical properties.