Old Web
English
Sign In
Acemap
>
Paper
>
Voltage and Size Dependence on Write-Error-Rates in STT MRAM down to 11 nm Junction Size
Voltage and Size Dependence on Write-Error-Rates in STT MRAM down to 11 nm Junction Size
2016
J. Nowak
R. P. Robertazzi
J. Z. Sun
Guohan Hu
Jeong Park
Jung Lee
Anthony J. Annunziata
Gen P. Lauer
Chandrasekharan Kothandaraman
Eugene O. Sullivan
Philip Louis Trouilloud
Young-Hyun Kim
Daniel C. Worledge
Keywords:
Optoelectronics
Voltage
Magnetoresistive random-access memory
Materials science
size dependence
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
1
Citations
NaN
KQI
[]