Optimized selective mixing of a GaAs/GaAlAs quantum well for the fabrication of quantum wires

We present the structure of a GaAs/GaAlAs quantum well, which can promote strong mixing rates upon high‐dose implantation, with good recovery of the electronic properties after annealing. This structure is employed to fabricate quantum‐well wires by Ga+ masked implantation. Low‐temperature photoluminescence measurements reveal large lateral modulations of the effective band gap (≳178 meV), and small lateral interdiffusion lengths (10 nm). A simple calculation shows that one‐dimensional quantization energies between 11 and 20 meV can be expected in these structures.