A 2 ns 1 Mb CMOS mask ROM

A description is given of a high-performance 1-Mb CMOS mask ROM with access time as fast as 29 ns. The fast access is achieved through bit line capacitance reduction, sensitive amplifier design, and the use of double-metal interconnection. Delta-I noise and the electrostatic discharge (ESD) susceptibility problem have been solved. The process and device, cell structure, peripheral circuits, and sense amplifier and output buffer are described. >