Unusual growth modes in pulsed laser deposition of ZnSe thin films on GaAs
1998
In about 1000A thick films of ZnSe deposited on (001) GaAs substrates by pulsed laser deposition using Q-switched Nd:YAG laser, large clusters were found to grow on the sites of the microscopic surface damage in the substrate. Films deposited at a substrate temperature of 350°C showed a preferrential growth in (111) direction. At a substrate temperature of 450°C, the film was found to grow in polycrystalline wurtzite phase. Possible mechanism and reasons for these unusual growth modes are discussed.
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