High-speed atmospheric imaging of semiconductor wafers using rapid probe microscopy
2011
The aggressive device scaling imposed by the International Technology Roadmap for Semiconductors (ITRS) is
introducing additional and more demanding challenges to current in-line monitoring tools. In this paper we present a
new probe microscopy based technology, the Rapid Probe Microscope (RPM), which produces nano-scale images using
a height contrast mechanism in a non-vacuum environment. The system offers the possibility to address metrology
challenges in alternative ways to existing review and inspection tools. This paper presents applications of the RPM
process which cater to the requirements of the semiconductor industry. Results on several standard semiconductor wafer
layers have been used to demonstrate the capabilities of the RPM process, including nano-scale surface imaging at high
image capture rates.
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