Superconducting V3Si produced by pulsed laser annealing

Abstract Pulsed laser annealing has been utilized to fabricate superconducting V 3 Si from multilayer V-Si thin film samples. It is demonstrated that a single laser pulse can induce mixing to form V 3 Si in the A15 phase. The effects of multiple laser pulses and post thermal annealing on the superconducting transition temperature and width are presented, and a model is proposed to explain the effects of rapid heating and cooling on the V 3 Si structure.