Neutralization of D − -Centers in Si:P by Ballistic Phonons of Various Polarization

Impurity atoms in semiconductors at helium temperatures can capture an excess electron to an outer shell, thereby forming D − centers. By means of phonon inducedconductivity method (PIC)[1] it has been shown that D − centers are neutralized by one-phonon transitions from a bound state into the conduction band. There has been no study of the role played by the polarization of the phonons involved in the impurity-band transitions or in the process of phonon neutralization of D − centers.