Wideband variable gain amplifiers in GaAs MMIC

The design and performance of C, X, and K/sub u/-band GaAs MMIC variable-gain and variable-power amplifier circuits using an improved segmented dual-gate MESFET device with binary scaled gate width ratios are reported. The demonstrated 35-dB control range, flat octave-band gain response, and less than 10-degrees incidental phase variation as a function of gain/attenuation state over a 20-dB control range are significantly superior to conventional analog-controlled devices. >