Suppressed carrier modulation with tunnel diodes

This paper discusses suppressed carrier modulation circuits employing the tunnel diode as the nonlinear active element. A side-band-to-carrier ratio of 40 db (decibels) is achieved with a single tunnel diode. It is shown that a balanced modulator using two tunnel diodes acts as a ring modulator. Linear equivalent circuits for the tunnel diode modulators are developed and the performance criteria presented.