Numerical Simulation of Al X Ga 1-X N/AlN/GaN HEMT

In this paper, a novel AlGaN/AIN/GaN HEMT is simulated by self-consistently solving the Poisson-Schrodinger-Hydrodynamics equations. Compared with conventional AlGaN/GaN HEMT, the numerical results show that the insertion of a very thin AIN interfacial layer has favorable influence on the device performance because of the increased effective ΔEc, which brings improved sheet electron density and DC output current. In addition, the AIN interfacial layer can impede the flow of electrons from the channel to the surface-states and defects of AlGaN barrier layer, therefore the drain current collapse effect can be eliminated.