Radiation hardness evaluation of a 130 nm SiGe BiCMOS technology for the ATLAS electronics upgrade

Final results for a comprehensive radiation hardness evaluation of a high performance, low cost, 130nm SiGe BiCMOS technology are presented. After a survey of several available SiGe technologies, one was chosen in terms of performance, power consumption, radiation hardness, and cost and it is presented as a suitable technology for the front-end electronics of the Inner Detector and the Liquid Argon calorimeter. Gamma, neutron and proton irradiations have been performed up to target dose and fluence values, together with ELDRS assessment.