The photoelectronchemical properties of H:PbS/CdS/TiO 2 photoelectrodes

The work aims at enhancing the photoelectrochemical performance of photoelectrode from two aspects: The TiO 2 NTWs is manufactured by anodic oxidation method and then annealed in hydrogen atmosphere. The as-prepared materials are sensitized with PbS and CdS quantum dots via successive ion layer absorption method (SILAR) method. The as-prepared materials are characterized by scanning electron microscope(FESEM), energy dispersive x-ray (EDX), UV-vis diffused reflectance absorption spectra and X-ray diffraction(XRD). The photoelectrochemical performance of QDs/ H: TiO 2 NTWs is superior to the pure TiO 2 , Under AM 1.5 illumination of 100mW/cm 2 , the best short-circuit photocurrent density is 3.73mA/cm 2 , and corresponding energy covnversation efficiency of 2.06%. The results illustrate that SILAR method and hydrogen treatment method make TiO 2 NTWs has a bright application prospects in solar cells.