A process for producing a light emitting diode

There is provided a method of manufacturing a light emitting diode (1), wherein a light emitting structure (1a) is provided with a radiation exit side (1b), wherein the light emitting structure (1a) comprises a semiconductor layer sequence (3) and an active layer (3a), and wherein columnar structure elements (4) on the radiation exit side (1b) are formed, and the structural elements (4) have a main direction of extension in the direction perpendicular to the radiation outlet side (1b), and a converter material (5) on the radiation exit side (1b) with the structural elements (4) wherein the converter material (5) in a first relative movement (a) relative to the light emitting structure (1a) and parallel to the main direction of extension of the structural elements (4) is moved is applied, and the converter material (5) in a second relative movement (B) perpendicular to the main direction of extension the structural elements (4) is moved.