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On the InGaP/In(x)Ga(1-x)As Pseudomorphic High Electron-Mobility Transistor s with High-Temperature Reliabilities
On the InGaP/In(x)Ga(1-x)As Pseudomorphic High Electron-Mobility Transistor s with High-Temperature Reliabilities
2000
W.C. Liu
W-L Chang
Wen-Shiung Lour
K. H. Yu
K.W. Lin
K.P. Lin
C. H. Yen
Keywords:
Materials science
Heterojunction bipolar transistor
Electronic engineering
Indium gallium arsenide
Gallium arsenide
Analytical chemistry
Leakage (electronics)
Silicon carbide
High-electron-mobility transistor
Optoelectronics
Correction
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