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Drain-induced barrier lowering in normally-off AlGaN-GaN MOSFETs with single- or double-recess overlapped gate
Drain-induced barrier lowering in normally-off AlGaN-GaN MOSFETs with single- or double-recess overlapped gate
2017
Taku Sato
Kazuya Uryu
J Okayasu
Masayuki Kimishima
Toshi-kazu Suzuki
Keywords:
Drain-induced barrier lowering
Materials science
Optoelectronics
normally off
algan gan
Correction
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