Fabrication and characterisation of (Ba,Sr)TiO3 thin films by sol–gel technique through organic precursor route

Abstract Ferroelectric thin films of barium strontium titanate (BST) have been deposited on silicon and quartz substrates by sol–gel technique through organic precursor route. Crystalline films were obtained by post deposition annealing at a temperature of 700°C. X-ray diffraction (XRD) studies have been carried out to assess the crystallinity and phase formation. The surface features of the films, studied by optical microscopy reveal the grain growth pattern. The refractive index of the film has been estimated. Electrical characterisation of the films such as resistivity and C–V measurements in metal–ferroelectric–semiconductor (MFS) configuration have been carried out. The hysteresis behavior observed during the C–V measurements confirms the ferroelectric property of the films.