Subthreshold operation of PVDF-integrated dual- gate thin-film transistor for tactile sensing

This paper presents a piezoelectric-charge-gated thin-film transistor (TFT) operated in the subthreshold region intended for tactile sensing. The TCAD simulation has been conducted to detail the working principles of the device in the subthreshold region together with experimental results on a fullyintegrated sensor using polyvinylidene difluoride (PVDF) and a- Si:H dual-gate TFT.