Ultra-shallow junction with elevated SiGe source/drain fabricated by laser-induced atomic layer doping

A novel structure of NMOSFET with elevated SiGe source/drain region and ultra-shallow source/drain extension region is described. A new ultra-shallow junction formation technology, which is based on a damage-free process for replacing low energy ion implantation, is realised using ultra-high vacuum chemical vapour deposition and excimer laser annealing.