Determination of Vacancy Diffusivity in Silicon for Process Simulation

Vacancy diffusivity has been determined by using the fact that Si3N4 films deposited on silicon can be used as an extrinsic source of vacancies. Excess vacancies generated at the backside with Si3N4 films migrate to the boronimplanted region at the top side and its boron diffusion is retarded. Using these data, vacancy diffusivity is determined from the simulation.