Determination of Electrodynamic Parameters of In2O3 thin Films by Terahertz and Infrared Spectroscopy

Indium oxide is a transparent semiconductor widely used in optical-electronic systems of the visible and near infrared range, but insufficiently studied in the terahertz frequency range. In this study, the dielectric response function of indium oxide thin films on glass substrates was investigated by terahertz and infrared spectroscopy techniques to determine the effect of free carriers on the optical characteristics of films. The experimental results were analyzed applying multiparametric dispersion model of Drude–Lorentz. The basic electrodynamic parameters of In2O3 films are determined. Model transmission and conductivity spectra for films of different thickness are calculated. The possibility of using thin films of indium oxide as a transparent conductive layer in terahertz optoelectronics devices is shown.